confidential datasheet version 1 . 0 ju ly 20 1 5 . revision 1 . 0 magnachip semiconductor ltd . 1 map 7103 C 3a, high voltage boost converter ordering information part number top marking ambient temperature range package rohs status map 710 3dfrh map7103 llll ywxz - 40 to + 8 5 3mm x 3mm tdfn 10lead halogen free m ap 7103 3a, high voltage boost converter general description the map6503 consists of a high performance step - up switching regulator, a high performance step - down switching regulator, a high performance charge pump, a high - speed operational amplifi er and 16 channel level shifter. t he device is optimized for amoled application. a fa www.magnachip.com . features ? 4.5a, 0.1 ? , 45 v power mosfet ? 8.6v to 15. 9 v input supply voltage ? fixed 500khz switching frequency ? input supply under voltage lockout ? programmable soft - start ? vout over voltage protection ? over temperature protection ? internal current limit ? thin 10 - lead tdfn package ? rohs compliant and halogen free application ? gip tft - lcd panels general description the map 7103 is a high performance switching boost converter that provides a regulated supply voltage for active matrix thin film transistor(tft) liquid crystal displays(lcds) the map7103 inc orporates current mode, fixed - frequency, pulse width modulation(pwm) circuit w ith a build in n - mosfet to achieve high efficiency and fast transient response. the map7103 is available in a tdfn - 10l 3x3 mm 2 package application ? tablet pcs
confidential datasheet version 1 . 0 ju ly 20 1 5 . revision 1 . 0 magnachip semiconductor ltd . 2 map 7103 C 3a, high voltage boost converter block diagram figure 1) block diagram typical application circuit bill of materials item part number manufacturer description qty. ic map 7103 magnachip 3a, 16v step - up converter 1 l1 rlf7030 - 4r7m tdk 4.7uh , 3.5a, 26m ? in cl21a106kafn3ne samsung 10uf, 25v , 2012, x5r 2 c out cl21a 106 kafn n ne samsung 10 uf, 25v , 2012, x5r 3 c 1 cl10b 331kb8nnnc samsung 330p f, 50 v , 1608, x5r 1 c 2 /c 3 cl10a105ka8nnnc samsung 1uf, 25v , 1606, x5r 2 c ss cl10b333jb8nnn c samsung 33nf, 50 v , 1608, x5r 1 r 1 rc1608j 124 cs samsung 1 20 k ?, 1/1 2 rc1608j 103 cs samsung 10k? 3 rc1608j 104 cs samsung 100 k? l x c h i p e n a b l e 4 , 5 , 1 1 ( e x p o s e d p a d ) v i n e n g n d c o m p s s f b v o u t 3 3 0 p f c 1 v i n 1 2 v 3 3 n f c s s v o u t 1 6 . 2 5 v 1 0 0 k r 3 1 2 0 k r 1 1 0 k r 2 1 0 u f x 3 c o u t 1 u f c 3 1 0 u f x 2 c i n 1 u f c 2 m a p 7 1 0 3 4 . 7 u h l 1 d 1 8 9 3 2 1 0 1 c o n t r o l a n d d r i v e r l o g i c s o f t s t a r t c u r r e n t s e n s e p r o t e c t i o n l x o t p s u m m i n g c o m p a r a t o r 1 . 2 5 v s l o p e c o m p e n s a t i o n o s c i l l a t o r c l o c k o v p v d d e r r o r a m p l i f i e r s s l x p g n d v i n e n c o m p f b v o u t
confidential datasheet version 1 . 0 ju ly 20 1 5 . revision 1 . 0 magnachip semiconductor ltd . 3 map 7103 C 3a, high voltage boost converter pin configuration pin definitions pin# name description 1 comp compensation pin for error amplifier. connect a series rc from c omp to gnd. 2 fb feedback. the fb regulation voltage is 1.25v nominal. connect an external resistive voltage divider between the step - up regulator s output(vout) and gnd, with the center tap connected to fb. place the divider close to the ic and minimize the trace area to reduce noise coupling. 3 en chip enable. drive en low to turn off the boost 4,5,11 (exposed p ad) gnd ground. the exposed pad must be soldered to a large pcb and connected to gnd for maximum power dissipation. 6,7 lx switch. lx is the d rain of the internal mosfet. connect the inductor/ rectifier diode junction to lx and minimize the trace area for lower emi. 8 vout boost converter over voltage protection input. bypass vout with a minimum 1uf ceramic capacitor directly to gnd. 9 vin supp ly input. bypass vin with a minimum 1uf ceramic capacitor directly to gnd. 10 ss soft - start control. connect a soft - start capacitor(c ss ) to this pin. the soft - start capacitor is charged with a constant current of 5ua. the soft - start capacitor is discharge d to ground when en is low absolute maximum ratings parameter value unit lx, vout to gnd - 0.3v to 28v v vin, en , ss, fb to gnd - 0.3v to 16.5v v comp to gnd - 0.3v to 6.0v v junction temperature range - 40 to +150 storage temperature range - 65 to +1 50 package thermal resistance (ja) 65.9 /w power dissipation (ta=25 ) 1. 517 w human body model(hbm) 2 kv machine model(mm) 200 v charged device model (cdm) 700 v note: absolute maximum ratings are those values beyond which damage to the device ma y occur. functional operation under these conditions is not implied. recommended operating conditions ambient temperature range - 40 to + 85 junction temperature rnage - 40 to + 125 3mm x 3mm ultra thin d fn - 10 (top view) e x p o s e d p a d c o m p f b e n g n d g n d l x v o u t v i n s s l x 1 1 1 2 3 4 5 6 7 8 9 1 0
confidential datasheet version 1 . 0 ju ly 20 1 5 . revision 1 . 0 magnachip semiconductor ltd . 4 map 7103 C 3a, high voltage boost converter electrical characteristics v in =v en =12v, v out =16 . 25 v , typical val ues are at t a =25 ( un less otherwise noted. ) symbol parameter test conditions min. typ. max. unit general section v in input voltage range 8.6 15. 9 v v uvlo under voltage lock out rising threshold voltage 8.0 8.3 8.6 v hysteresis 0.6 0.8 1.0 v iq (on) quiescent current vfb=1.3v, not switching 1.0 1.2 ma r en enable pull down resistance 0.5 1 .0 1.5 m ? t sd thermal shutdown temperature (note1) 150 t sd_hys thermal shutdown hysteresis (note1) 10 v ovp v out over voltage threshold v out rising 18 1 9 20 v oscillator f osc oscillator frequency 450 500 550 khz d max maximum duty cycle 81 90 99 % error amplifier v ref fb regulation voltage 1.2375 1.25 1.2625 v i fb fb input bias current 100 na v fb_line fb line regulation 0.05 0.2 v g m transc onductance i= 2. 5 ua at vcomp=1v 80 100 120 ua/v av voltage gain (note1) fb to comp 700 v/v n - mosfet i lim current limit (note1) 4.5 a r ds(on) on - resistance (note1) 100 250 m? i leak leakage current vlx=24v 10 ua rcs current sense transresistance (note1 ) 0.25 v/a soft - start charge current 3.5 5 .0 6.5 ua control inputs v ih enable logic high voltage 1.4 v v il enable logic low voltage 0. 7 note1) guaranteed by design, characterization and correlation with process controls, not fully tested in production
confidential datasheet version 1 . 0 ju ly 20 1 5 . revision 1 . 0 magnachip semiconductor ltd . 5 map 7103 C 3a, high voltage boost converter typical characteristics quiescent current vs. temperature figure 1. quiescent current boost frequency vs. temperature figure 3 . boost frequency switching waveform [ light load ] figu re 5. output voltage C light load(0.1a) fb leakage current vs. temperature figure 2 . feedback leakage current boost frequency vs. temperature figure 4 . efficiency C inductor [4.7uh] switching waveform [ heavy load ] figure 6 . output vo ltage C heavy load(1.0a)
confidential datasheet version 1 . 0 ju ly 20 1 5 . revision 1 . 0 magnachip semiconductor ltd . 6 map 7103 C 3a, high voltage boost converter operation the map7103 provided a regulated supply voltage for panel source driver ics. the map7103 uses a constant frequency, peak current mode pwm(pulse width modulation) boost regulation architecture to regulate the feedback voltage. at the beginning of each cycle, the n - channel mosfet switch is turned on, forcing the inductor current to rise. the current at the source of the switch is internally measured and converted to a voltage by the current sense amplifier . that voltage is compared to the error voltage at comp. the voltage at the output of the error amplifier is an amplified version of the difference between the 1.25v reference voltage and the feedback voltage voltage. when these two voltage are equal, the pwm comparator turns off the switch forcing the inductor current to the output capacitor through the external rectifier. this causes the inductor current to decrease. t he peak inductor current is controlled by the voltage at comp, which in turn is contro lled by the output voltage. t hus the output voltage is regulated by the inductor current to satisfy the load. the use of current mode regulation improves transient response and control loop stability . application information soft - start capacitor the map7103 provides soft - start function to minimize the inrush current at the input. t his prevents faults tripping of the input voltage at startup due to input current overshoot. w hen powered on, a 5ua internal constant current charges an external capacitor at ss pin . as the ss capacitor is charged, the voltage at ss rises. the map7103 internally clamps the voltage at comp to 700mv above the voltage at ss. t he soft - start ends when the voltage at ss reaches 1 . 2 5v. this limits the inductor current at startup, forcing the input current to rise slowly to the current required to regulate the output voltage. the soft - start period is determined by the equation : t ss = c ss x v / i where c ss is the soft - start capacitor from ss to gnd, v is reference voltage a nd i is charging current if c ss =33nf, the internal soft - start function will be turned on and period time is approximately 8ms. setting the output voltage t he regulated output voltage is shown as the following equation where v ref =1.25v (typ.) t he recommended voltage for r2 should be at least 10k? selecting the input capacitor lower esr ceramic capacitor are recommended for input capacitor applications. l ow esr will reduce the i nput voltage ripple caused by swi tching operation. a 10uf capacitor is sufficient for most applications. selecting the output capacitor the output capacitor is required to maintain the dc output voltage. low esr capacitor are preferred to keep t he output voltage ripple to a minimum. the characteristic of the output capacitor also affects the stability of the regulation control system. the o utput voltage ripple is shown as the following equation: w here v ripple is the output ripple voltage, v in and v out are the dc input and out put voltages respectively, i load is the load current, f sw is the switching frequency, and c out is the capacitance of the output capacitor
confidential datasheet version 1 . 0 ju ly 20 1 5 . revision 1 . 0 magnachip semiconductor ltd . 7 map 7103 C 3a, high voltage boost converter choose an output capacitor to satisfy the output ripple and load transient requirements of the design. a 4.7uf C 22 uf ceramic capacitor is suitable for most applications loop compensation the output of the transconductance error amplifier(comp) is used to compensate the regulation control system. the system uses two poles and one zero to stabilize the control loop. t he poles are f p1 set by the output capacitor c out and load resistance and f p2 set by the compensation capacitor c 1 . the zero f z1 is set by the compensation c apacitor c 1 and the compensation resistor r3. for typical application , v in =12v, v out =16 .25 v, c out = 10 ufx3 ea , l1=4.7uh, while the recommended value for compensation is as follows : r3 = 100 kohm, c1= 330p f selecting the inductor the inductor is required to force the higher output voltage while being driven by the input voltage. a larger value i nductor results in less ripple current that results in lower peak inductor current, reducing stress on the internal n - channel switch. however, the larger series resistance, and/or lower saturation current. a 4.7 uf inductor is recommended for most 500khz applicat ions. as a general rule, the peak - to - peak ripple current range is 20% to 40% of the maximum input current. make sure that the peak inductor current is below 75% of the current limit at t he operating duty cycle to prevent loss of regulation due to the curr ent limit. also make sure that the inductor does not saturate under the worst - case load transient and startup conditions. calculate the required inductance value by the equation where i load (max) is the maximum load current, i is the peak - to - peak inductor ripple current, and i s efficiency selecting the diode the output rectifier diode supplies current to the inductor when the internal mosfet is off. schottky diodes are chosen for their low forward voltage drop and fast switching speed. th e diode should be rated for a reverse v oltage equal to or greater than the output voltage used. t he average current rating must exceed the average o utput current and the peak current rating must be greater than the peak inductor current.
confidential datasheet version 1 . 0 ju ly 20 1 5 . revision 1 . 0 magnachip semiconductor ltd . 8 map 7103 C 3a, high voltage boost converter package dimensions
confidential datasheet version 1 . 0 ju ly 20 1 5 . revision 1 . 0 magnachip semiconductor ltd . 9 map 7103 C 3a, high voltage boost converter revision history date version changes 2014.08.11 0.0 initial release. 2014.10.09 0.1 update to display spec 2014.10.20 0.2 update to package information 2014.11.07 0.3 vref accuracy : 1.5% ? ? ? ? ? ? ih & v il ) 2015.06.30 0.10 update package thermal resistance 2015.07.03 1.00 update absolute maximum ratings(junction tempe rature)
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